SanDisk Honored for Flash Memory Innovation

SanDisk Honored for Flash Memory Innovation

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Anaheim, CA—SanDisk received the ISSCC Lewis Winner Outstanding Paper Award at the 2010 IEEE International Solid-State Circuits Conference.

The award was presented to Cuong Trinh, director, design engineering, SanDisk, who had delivered a paper in 2009 detailing advancements leading to the development of 4-bit per cell (X4) memory.

“Using our patented X4 controller technology’s memory management, signal processing schemes and exceptionally robust error-correction code, we were able to achieve 4-bits per cell with strong performance and low cost,” said Trinh. SanDisk codeveloped X4 with its memory technology and manufacturing partner, Toshiba.

The X4 is said to enable high manufacturing efficiency and lowest die cost, while meeting the performance requirements of industry standard cards that employ MLC NAND. Shipments of SanDisk SDHC and MS Pro cards employing X4 began last fall.

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